Storage element and memory

ABSTRACT

A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

CROSS REFERENCES TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.11/564,595 filed Nov. 29, 2006, the entirety of which is incorporatedherein by reference to the extent permitted by law. The presentinvention contains subject matter related to Japanese Patent ApplicationJP 2005-348112 filed with the Japanese Patent Office on Dec. 1, 2005,the entire contents of which being incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a storage element including a storagelayer for storing a magnetization state of a ferromagnetic layer asinformation, and a pinned magnetization layer with its magnetizationdirection fixed, wherein the direction of magnetization of the storagelayer is changed through injection of spin polarized electrons thereinby passing a current in a direction perpendicular to the film plane, andto a memory including the storage elements. The present invention isfavorably applicable to nonvolatile memories.

2. Description of the Related Art

In information apparatuses such as computers, high-operating-speed andhigh-density DRAMs are widely used as random access memories (RAMs).

However, the DRAMs are volatile memories which loose information whenthe power supply is turned off and, therefore, nonvolatile memorieswhich do not loose information even upon turning-off of the power supplyare desired.

As a candidate for a nonvolatile memory, the magnetic random accessmemory (MRAM) operative to record information by use of magnetization ofa magnetic material has been paid attention to, and development thereofhas been progressing (refer to, for example, Nikkei Electronics, 2001.2. 12, pp. 164 to 171).

The MRAM is a memory in which electric currents are passed through twokinds of address wirings (word lines and bit lines) substantiallyorthogonally intersecting each other, and the magnetization of amagnetic layer of magnetic storage elements located at intersectionsbetween the address wirings is reversed by current-induced magneticfields generated from the address wirings, thereby recordinginformation.

Besides, reading of the information is achieved by use of the so-calledmagnetoresistance effect (MR effect) in which resistance variesaccording to the direction of magnetization of the storage layer in themagnetic storage elements.

A schematic diagram (perspective view) of a general MRAM is shown inFIG. 17.

A drain region 108, a source region 107, and a gate electrode 101 whichconstitute a selection transistor for selecting a memory cell are formedat a portion, isolated by an element isolation layer 102, of asemiconductor substrate 110 such as a silicon substrate.

In addition, a word line 105 extending in the front-rear direction inthe figure is provided on the upper side of the gate electrode 101.

The drain region 108 is formed in common for the selection transistorsarranged on the left and right sides in the figure, and a wiring 109 isconnected to the drain region 108.

A magnetic storage element 103 having a storage layer of which thedirection of magnetization can be reversed is disposed between the wordline 105 and a bit line 106 located on the upper side and extending inthe left-right direction in the figure. The magnetic storage element 103is composed, for example, of a magnetic tunnel junction element (MTJelement).

Further, the magnetic storage element 103 is electrically connected tothe source region 107 through a bypass line 111 extending in ahorizontal direction and a contact layer 104 extending in the verticaldirection.

When currents are passed through the word line 105 and the bit line 106,current-induced magnetic fields are applied to the magnetic storageelement 103, with the result of reversal of the magnetization directionof the storage layer in the magnetic storage element 103, wherebyinformation can be recorded.

In a magnetic memory such as an MRAM, for stable holding of theinformation recorded therein, it may be necessary that the magneticlayer (storage layer) for recording information has a fixed coerciveforce.

On the other hand, for rewriting the recorded information, it may benecessary to pass currents on a certain level in the address wirings.

However, attendant on the miniaturization of the elements constitutingthe MRAM, the address wirings are reduced in sectional size, so that itbecomes difficult to pass sufficient currents in the address wirings.

In view of this, as a configuration capable of magnetization reversal bysmaller currents, a memory designed to utilize magnetization reversal byspin injection has been attracting attention (refer to, for example,Japanese Patent Laid-open No. 2003-17782).

The magnetization reversal by spin injection means a process in whichelectrons having undergone spin polarization by passing through amagnetic material are injected into another magnetic material to therebycause magnetization reversal in the another magnetic material.

For example, by a process in which a current is passed in a giantmagnetoresistance effect element (GMR element) or a magnetic tunneljunction element (MTJ element) in the direction perpendicular to thefilm plane of the element, it is possible to reverse the magnetizationdirection of a magnetic layer at least a part of the element.

In addition, the magnetization reversal by spin injection isadvantageous in that the magnetization reversal can be realized withsmall currents even when the elements are miniaturized.

Schematic diagrams of a memory configured to utilize the magnetizationreversal by spin injection as above-mentioned are shown in FIGS. 15 and16. FIG. 15 is a perspective view and FIG. 16 is a sectional view.

A drain region 58, a source region 57, and a gate electrode 51 whichconstitute a selection transistor for selecting a memory cell are formedat a portion, isolated by an element isolation layer 52, of asemiconductor substrate 60 such as a silicon substrate. Of thesecomponents, the gate electrode 51 functions also as a word lineextending in the front-rear direction in FIG. 15.

The drain region 58 is formed in common for selection transistorsarranged on the left and right sides in FIG. 15, and a wiring 59 isconnected to the drain region 58.

A storage element 53 having a storage layer of which the direction ofmagnetization can be reversed by spin injection is disposed between thesource region 57 and a bit line 56 disposed on the upper side andextending in the left-right direction in FIG. 15.

The storage element 53 is composed, for example, of a magnetic tunneljunction element (MTJ element). Symbols 61 and 62 in the figure denotemagnetic layers; of the two magnetic layers 61 and 62, one is a pinnedmagnetization layer of which the magnetization direction is fixed, whilethe other is a free magnetization layer, or storage layer, of which themagnetization direction can be changed.

In addition, the storage element 53 is connected to the bit line 56 andthe source region 57 through upper and lower contact layers 54,respectively. This ensures that the magnetization direction of thestorage layer in the storage element 53 can be reversed through spininjection by passing a current in the storage element 53.

As compared with the general MRAM shown in FIG. 17, the memory designedto utilize the magnetization reversal by spin injection asjust-mentioned has also the characteristic feature that the devicestructure (element structure) can be simplified.

In addition, as compared with the general MRAM in which magnetizationreversal is conducted by use of an external magnetic field, the memoryutilizing the magnetization reversal by spin injection is advantageousin that the write current is not increased even upon a progress inminiaturization of the elements.

Meanwhile, in the case of the MRAM, the write wirings (word line and bitline) are provided separately from the storage element, and informationis written (recorded) by use of the current-induced magnetic fieldgenerated by passing currents through the write wirings. Therefore, thecurrents necessary for writing can be sufficiently passed in the writewirings.

On the other hand, in the memory configured to utilize the magnetizationreversal by spin injection, it may be necessary to reverse themagnetization direction of the storage layer by spin injection effectedby the current passed in the storage element.

Since the writing (recording) of information is carried out by passing acurrent or currents directly in the storage element, a memory cell isconfigured by connecting the storage element to the selectiontransistor, for selecting the memory cell in which to write theinformation. In this case, the current flowing in the storage element islimited by the quantity of the current which can be passed through theselection transistor (the saturation current of the selectiontransistor).

Therefore, it may be necessary to write information with a currentsmaller of not more than the saturation current of the selectiontransistor and, hence, to reduce the current to be passed in the storageelement by improving the efficiency of spin injection.

Besides, for enlarging the read current, it may be necessary to secure ahigh magnetoresistance variation ratio; for this purpose, a storageelement configuration in which intermediate layers in contact with bothsides of the storage layer are tunnel insulation layers (tunnel barrierlayers) is effective.

In the case where the tunnel insulation layer is thus used as theintermediate layer, the current passed in the storage element islimited, due to the need to prevent dielectric breakdown of the tunnelinsulation layer. From this viewpoint also, it may be necessary tosuppress the current at the time of spin injection.

Therefore, in the storage element configured to reverse themagnetization direction of the storage layer by spin injection, it maybe necessary to improve the spin injection efficiency and thereby toreduce the current needed for writing information.

SUMMARY OF THE INVENTION

Generally, in the case of configuring a storage element by use of amagnetoresistance effect element such as an MTJ element and a GMRelement, the storage layer is connected to a pinned magnetization layerthrough a tunnel insulation layer, and, in this case, a non-magneticmetallic layer such as an electrode layer for passing a current in thestorage element is connected to the side, opposite to the pinnedmagnetization layer, of the storage layer.

However, when the magnetization direction of the storage layer isreversed by spin injection, a spin current flows through thenon-magnetic metallic layer such as an electrode layer, and, as areaction thereto, the magnetization reversal in the storage layer issuppressed; namely, the so-called spin pumping phenomenon takes place.

As a result, the current necessary for reversal of magnetization of thestorage layer would be increased, and the spin injection efficiencywould be worsened.

Further, in order to reduce the reversing current, it is desirable toreduce as much as possible the element size and saturation magnetizationof the storage layer.

However, when the element size and saturation magnetization of thestorage layer are reduced, thermal stability of the storage elementwould be lowered, leading to instable operations of the element.

Thus, there is a need to provide a storage element in which generationof the spin pumping phenomenon can be restrained and which hassatisfactory thermal stability, and a memory including the storageelements.

According to the present embodiment, a storage element includes astorage layer configured to hold information by use of a magnetizationstate of a magnetic material, with a pinned magnetization layer beingprovided on one side of the storage layer, with a tunnel insulationlayer, and with the direction of magnetization of the storage layerbeing changed through injection of spin polarized electrons by passing acurrent in the lamination direction, so as to record information in thestorage layer, wherein a spin barrier layer configured to restraindiffusion of the spin polarized electrons is provided on the side,opposite to the pinned magnetization layer, of the storage layer; andthe spin barrier layer includes at least one material selected from thegroup including oxides, nitrides, and fluorides.

According to present embodiment, a memory includes storage elements eachhaving a storage layer for holding information by use of a magnetizationstate of a magnetic material and two kinds of wirings intersecting eachother, and the storage elements are configured to be the storage elementof the present embodiment. The storage elements are disposed nearintersections of the two kinds of wirings and disposed between the twokinds of wirings, and the current in the lamination direction flows inthe storage element by way of the two kinds of wirings, whereby the spinpolarized electrons are injected.

According to the configuration of the storage element in the presentembodiment described above, a storage element includes a storage layerconfigured to hold information by use of a magnetization state of amagnetic material, with a pinned magnetization layer being provided onone side of the storage layer, with a tunnel insulation layer, and withthe direction of magnetization of the storage layer being changedthrough injection of spin polarized electrons by passing a current inthe lamination direction, so as to record information in the storagelayer. Accordingly, through injection of spin polarized electrons bypassing a current in the lamination direction, so that recordinginformation in the storage layer can be executed.

Also, a spin barrier for restraining diffusion of the spin polarizedelectrons is provided on the side, opposite to the pinned magnetizationlayer, of the storage layer, and the spin barrier layer includes atleast one material selected from the group including oxides, nitrides,and fluorides. Accordingly, a spin pumping phenomenon can be restrained,thereby reducing current necessary for reversing the magnetization ofthe storage layers, and the spin injection efficiency can be enhanced.

Furthermore, the spin barrier layer thus provided enhances the thermalstability of the storage layer, thereby enabling to holding informationrecorded in the storage layer stably.

According to the memory of the present embodiment described above, thememory includes storage elements each having a storage layer for holdinginformation by use of a magnetization state of a magnetic material, andtwo kinds of wirings intersecting each other, and the storage elementsare configured to be the storage element of the present embodiment. Thestorage elements are disposed near intersections of the two kinds ofwirings and disposed between the two kinds of wirings, and the currentin the lamination direction flows in the storage element by way of thetwo kinds of wirings, whereby the spin polarized electrons are injectedso as to record information.

Through the spin injection, current (threshold current) necessary forreversing the magnetization direction of the storage layer in thestorage elements can be reduced.

Furthermore, information recorded to the storage layer in the storageelements can be hold stably.

According to the above-described present embodiment, by enhancing thespin injection efficiency, current necessary for recording informationcan be reduced.

Thus, power consumption of the entire memory can be reduced.

As a result, a memory necessary for low power consumption which has notbeen precedent in the related art can be realized.

In addition, the storage layer in the storage elements has sufficientthermal stability, so that the storage elements have excellentcharacteristics of holding information.

Furthermore, since current necessary for recording information can bereduced, operation range for recording information by passing a currentcan be enlarged, thereby securing widely the operation margin.

Therefore, a memory which operates stably with high reliability can berealized.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic configuration diagram (perspective view) of amemory according to an embodiment of the present invention;

FIG. 2 is a sectional diagram of a storage element in FIG. 1;

FIG. 3 is a schematic configuration diagram of a storage elementaccording to another embodiment of the present invention;

FIG. 4 is a schematic configuration diagram of a storage elementaccording to a further embodiment of the present invention;

FIG. 5 is a sectional diagram of a laminate film to be a storageelement, in yet another embodiment of the present invention;

FIG. 6 is a schematic configuration diagram of a storage elementaccording to a yet further embodiment of the present invention;

FIGS. 7A and 7B are sectional diagrams of storage elements inComparative Examples;

FIG. 8 is a diagram showing thermal stability indices of samples ofstorage elements according to Examples and Comparative Examples inExperiment 1;

FIGS. 9A to 9D are diagrams showing the relationship between thethickness of a non-magnetic layer and TMR ratio, for samples of storageelements according to Examples and Comparative Examples in Experiment 1;

FIGS. 10A to 10D are diagrams showing the relationship between thethickness of the non-magnetic layer and reversing current density, forsamples of storage elements according to Examples and ComparativeExamples in Experiment 1;

FIGS. 11A to 11D are diagrams showing the relationship between thethickness of an MgO film and TMR ratio, for samples of storage elementin Experiments 2 to 5;

FIGS. 12A to 12D are diagrams showing the relationship between thethickness of the MgO film and reversing current density, for the samplesof storage element in Experiments 2 to 5;

FIG. 13 is a diagram showing the relationship between external magneticfield and threshold current (reversing current), for samples in Examplesprovided with a non-magnetic metallic layer in Experiment 6;

FIG. 14 is a diagram showing the reversing current density, for thesamples of storage element in Experiment 6;

FIG. 15 is a schematic configuration diagram (perspective view) of amemory utilizing magnetization reversal by spin injection;

FIG. 16 is a sectional diagram of the memory shown in FIG. 15; and

FIG. 17 is a perspective diagram schematically showing the configurationof an MRAM according to the related art.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Before describing specific embodiments of the present invention, thegist of the invention will first be described below.

According to the present embodiment, information is recorded throughreversal of the magnetization direction of a storage layer in storageelements by the above-mentioned spin injection. The storage layer iscomposed of a magnetic material such as a ferromagnetic layer, and isoperative to hold information by use of the magnetization state(magnetization direction) of the magnetic material.

The basic operation for reversing the magnetization direction of themagnetic layer by spin injection is to pass a current of not less than athreshold (Ic) in the storage element composed of a giantmagnetoresistance effect element (GMR element) or a magnetic tunneljunction element (MTJ element) in a direction perpendicular to the filmplane of the storage element. In this case, the polarity (direction) ofthe current depends on the magnetization direction to be reversed.

When a current of which the absolute value is lower than the thresholdvalue is passed, the magnetization reversal does not occur.

Besides, in the present invention, the magnetic tunnel junction (MTJ)element is configured by use of a tunnel insulation layer formed of aninsulating material as a non-magnetic intermediate layer between thestorage layer and a pinned magnetization layer, taking into account thesaturation current of the selection transistor mentioned above.

With the magnetic tunnel junction (MTJ) element configured by use of thetunnel insulation layer, the magnetoresistance variation ratio (MRratio) can be enhanced and the read signal magnitude can be enlarged, ascompared with the case where a giant magnetoresistance effect (GMR)element is configured by use of a non-magnetic conductive layer.

Meanwhile, the threshold Ic of the current needed for reversal of themagnetization direction by spin injection is phenomenalisticallyrepresented by the following formula (1) (refer to, for example, F. J.Albert et al., Appl. Phys. Lett., 77, p. 3809, 2000).I _(c) ^(±) =kM _(s) V(H _(K) ^(effective))/g ^(±)  (1)where k is a constant, g^(±) is a reversal coefficient intrinsic of amaterial and corresponding to the positive and negative currentpolarities, H_(K) ^(effective) is an effective magnetic anisotropy, Msis the saturation magnetization of a magnetic layer, and V is the volumeof the magnetic layer.

For securing a wide operation margin of the storage element andpermitting the storage element to operate stably, it may be necessary toreduce the threshold Ic of the current.

In addition, it is important to suppress the dispersion of the thresholdIc among the storage elements in memory cells.

With the threshold Ic of the current reduced, the power consumption ofeach storage element and the power consumption of the memory as a wholecan be reduced.

In addition, with the threshold Ic of the current reduced, it becomespossible to use a selection transistor of which the saturation currentis smaller, i.e., the gate width is smaller. Therefore, it becomespossible to contrive miniaturization of the memory cell and to enhancethe degree of integration of the memory. This promises a reduction inthe size of the memory and an increase in the storage capacity of thememory.

In the formula (1) above, the term of the effective magnetic anisotropyH_(K) ^(effective) is composed of H_(K) in a direction in the film planeof the magnetic layer and H_(K) in the direction perpendicular to thefilm plane. In the case of a storage layer using a material having amagnetic anisotropy in the film plane, such as CoFe and CoFeB, H_(K) inthe direction perpendicular to the film plane is greater than H_(K) in adirection in the film plane, and H_(K) in the direction perpendicular tothe film plane is given as Ms/2.

In this case, the threshold Ic of the formula (1) is represented by thefollowing formula (2):Ic=k·Ms·V·(H _(K) +Ms/2)/g ^(±)  (2)where H_(K)<<Ms.

It is seen from the above formula (2) that, for lowering the thresholdIc of the current, it is effective to reduce the saturationmagnetization Ms and the volume V of the storage layer.

Further more, for holding the information recorded in the storageelements, it may be necessary for the thermal stability index(parameter) Δ of the storage layer to be controlled to be not less thana certain value. In general, it is said to be necessary for the thermalstability index Δ to be not less than 60, preferably not less than 70.

The thermal stability index Δ is represented by the following formula:Δ=Ms·V·H _(K)·(½k _(B) T)  (3)where k_(B) is Boltzmann's constant, and T is temperature.

However, as seen from the above formula (3), the thermal stability indexΔ would be lowered when the saturation magnetization Ms is lowered.

Therefore, in order to reduce the threshold Ic of the current and toprevent the thermal stability index Δ from being lowered attendant on alowering in the saturation magnetization, it may be necessary toincrease the anisotropic magnetic field H_(K).

Examples of the measure to increase the anisotropic magnetic field H_(K)include a method in which the minor axis size of the storage element isreduced to thereby obtain an increased aspect ratio (major axissize/minor axis size) of the storage element, and a method in which theanisotropic magnetic field H_(K) of the ferromagnetic materialconstituting the storage layer is increased.

Taking into account an increase in the density of the memory, it isdesirable to adopt the latter measure, i.e., the method in which theanisotropic magnetic field H_(K) of the ferromagnetic material of thestorage layer is increased.

For this purpose, it is desirable that the saturation magnetization Msintrinsic of the ferromagnetic material is maintained throughout thewhole film thickness region of the storage layer and the storage layeris a thin film.

Meanwhile, in the case where the storage element is composed of amagnetoresistance effect element such as an MTJ element and a GMRelement, as above-mentioned, a non-magnetic metallic layer such as anelectrode layer for passing a current in the storage element isgenerally connected to the side, opposite to the pinned magnetizationlayer, of the storage layer.

Examples of such a non-magnetic metallic layer include a lower electrodelayer, an upper electrode layer, an under metal layer, and the so-calledcap layer.

When such a non-magnetic metallic layer is in direct contact with thestorage layer, the constituent elements of the non-magnetic metalliclayer may diffuse into the ferromagnetic material of the storage layerthrough interface diffusion, thereby generating a degradedcharacteristics region where the characteristics intrinsically possessedby the ferromagnetic material of the storage layer are degraded.Particularly, since the lower electrode layer, the upper electrodelayer, the under metal layer, the so-called cap layer and the like arethicker than the storage layer (by a factor of about two to severaltimes, in terms of film thickness), the amount of the non-magneticmetallic elements which would diffuse is large.

When the degrade characteristics region is thus generated in the storagelayer, the characteristics of the storage layer as a magnetic materialare spoiled, resulting in degradation of the MR ratio, the H_(K) valueor the like.

When the MR ratio, the H_(K) value or the like is thus degraded, readingof the information recorded in the storage element may become difficultto carry out, or the thermal stability index Δ of the storage layer maybe lowered, causing the storage element to be thermally instable, whichis undesirable for the storage element.

Therefore, it is desirable that the degraded characteristics region dueto diffusion between the storage layer and the non-magnetic metalliclayer is not generated in the storage layer.

As a result of various investigations, it was found out that when a spinbarrier layer for suppressing the diffusion of spin polarized electronsis provided on the side, opposite to the pinned magnetization layer, ofthe storage layer to thereby isolate the storage layer and thenon-magnetic metallic layer from each other by the spin barrier layer,the above-mentioned spin pumping phenomenon can be restrained, the spininjection efficiency can be enhanced, and the generation of theabove-mentioned degraded characteristics region can be restrained,resulting in that the storage layer displays the intrinsiccharacteristics of the ferromagnetic material.

Accordingly, in the present invention, the spin barrier layer forrestraining the diffusion of spin polarized electrons is provided on theside, opposite to the pinned magnetization layer, of the storage layer,in configuring the storage element.

Besides, in the present invention, the spin barrier layer is configuredby use of at least one material selected from the group includingoxides, nitrides, and fluorides.

Specifically, the spin barrier layer is composed of at least onematerial selected from the group including oxides, nitrides, andfluorides, or is composed of a material which contains at least onematerial selected from the group including oxides, nitrides, andfluorides as main constituent and which contains a small amount of otherelement (for example, a metallic element or the like) added thereto.

With the spin barrier layer thus configured by use of at least onematerial selected from the group including oxides, nitrides, andfluorides, the spin barrier layer has basically insulation property.

To be more specific, examples of the material for the spin barrier layerinclude magnesium oxide, aluminum oxide and aluminum nitride, in whichan element having high affinity to oxygen or nitrogen, such as magnesiumand aluminum, is used.

Other than these materials, there may also be used various materialssuch as SiO₂, Bi₂O₃, MgF₂, ZnO, Ta₂O₅, CaF, SrTiO₂, AlLaO₃, and Al—N—O.

Incidentally, the spin barrier layer may be formed by use of the samematerial as that of the intermediate layer (the tunnel insulation layeror the like) between the storage layer and the pinned magnetizationlayer.

With the spin barrier layer for restraining the diffusion of the spinpolarized electrons being thus provided in contact with the side,opposite to the pinned magnetization layer, of the storage layer, theabove-mentioned spin pumping phenomenon can be restrained, and the spininjection efficiency can be enhanced.

Further, since the generation of the degraded characteristics region dueto diffusion between the storage layer and the non-magnetic metalliclayer can be restrained by the spin barrier layer which is basically aninsulating layer, the characteristics intrinsically possessed by theferromagnetic material of the storage layer can be displayed.

This makes it possible to restrain the degradation of the MR ratio dueto the degraded characteristics region, thereby improving the readoutput, and to set a thin storage layer such as to maximize the spininjection efficiency, for example. In other words, it is possible toenhance the spin injection efficiency, without being attended bydegradation of characteristics such as MR ratio, and to reduce thethreshold Ic of the current.

Besides, since the generation of the degraded characteristics region canbe restrained, the thickness of the storage layer can be reducedaccordingly.

In addition, with the spin barrier layer provided, the storage layer issandwiched by the insulation layers (the tunnel insulation layer and thespin barrier layer) on both the upper and lower sides, so that thestorage layer is not liable to experience metal-metal atomic diffusion.Therefore, other than the effect of restraining the generation of thedegraded characteristics region above-mentioned, it is possible torigorously control the thickness of the storage to a small thickness,without depending on the conditions of the manufacturing process(thermal hysteresis or the like), the influences of internal stresses,or the surface condition of an underlying layer, and the threshold Ic ofthe current can thereby be reduced.

Further, in the multiplicity of storage elements formed in a wafer, thedispersion of the threshold Ic of the current can be suppressed.

Besides, particularly when magnesium oxide (MgO) is used as the materialfor the tunnel insulation layer, the magnetoresistance variation ratio(MR ratio) can be enhanced, as compared with the case of using aluminumoxide, which has been generally used hitherto.

In general, the spin injection efficiency depends on the MR ratio; asthe MR ratio is higher, the spin injection efficiency is enhanced, andthe magnetization reversing current density can be lowered.

Therefore, by use of magnesium oxide as the material of the tunnelinsulation layer present as an intermediate layer, it is possible toreduce the write threshold current in writing information by spininjection, and to write (record) information with less current. Inaddition, it is possible to enlarge the read signal magnitude.

This makes it possible to secure an MR ratio (TMR ratio), to reduce thewrite threshold current in writing by spin injection, and to write(record) information with less current. Besides, it is possible toaugment the read signal intensity.

In the case where the tunnel insulation layer is composed of a magnesiumoxide (MgO) film, it is desirable that the MgO film is crystallized andmaintains crystal orientation in the 001 direction.

Where magnesium oxide is used as the material for the tunnel insulationlayer, it may be generally demanded that the annealing temperature isnot less than 300° C., desirably in a high temperature range of 340 to380° C., for the purpose of obtaining excellent MR characteristics. Sucha temperature is higher than the annealing temperature range (250 to280° C.) in the case of aluminum oxide used hitherto for forming theintermediate layer.

This is considered to be due to the fact that a high temperature isnecessary for forming a magnesium oxide film with appropriate internalstructure and crystal structure.

Therefore, excellent MR characteristics may not be obtained unless aheat-resistant ferromagnetic material is used also for the ferromagneticlayer in the storage element so as to secure resistance tohigh-temperature annealing. According to the present embodiment, theprovision of the spin barrier layer restrains diffusion of atoms intothe ferromagnetic layer constituting the storage layer, and enhances thethermal resistance of the storage layer, so that the storage layer canendure the annealing at a high temperature of 340 to 400° C., withoutdegradation of magnetic properties.

This is advantageous in that a general semiconductor MOS forming processcan be applied at the time of manufacturing a memory including thestorage elements, and the memory including the storage elementsaccording to this embodiment can be applied as a general-purpose memory.

In addition, for passing a sufficient write current in the storageelement, it may be necessary to reduce the areal resistance of thetunnel insulation layer (tunnel barrier layer).

The areal resistance of the tunnel insulation layer should be controlledto or below several tens of ohms per square micrometers, from theviewpoint of obtaining a current density necessary for reversing themagnetization direction of the storage layer by spin injection.

Then, in the tunnel insulation layer composed of an MgO film, thethickness of the MgO film should be set to or below 1.5 nm, forobtaining an areal resistance in the just-mentioned range.

Examples of the material which can be used for the tunnel insulationlayer between the storage layer and the pinned magnetization layer,other than magnesium oxide, include various insulating materials,dielectric materials, and semiconductors, such as aluminum oxide,aluminum nitride, SiO₂, Bi₂O₂, MgF₂, CaF, SrTiO₂, AlLaO₂, Al—N—O, etc.

In addition, it is desirable to reduce the storage element in size sothat the magnetization direction of the storage layer can be easilyreversed with a small current. Preferably, the area of the storageelement is set to or below 0.04 μm².

Ordinarily, the storage layer is formed mainly of a ferromagneticmaterial such as Co, Fe, Ni, and Gd. The storage layer is formed as alaminate of one or more layers each of which is formed from an alloy ofat least two such ferromagnetic materials.

To each ferromagnetic layer, an alloy element or elements are added forthe purpose of controlling the magnetic characteristics, such assaturation magnetization, and/or the crystal structure (crystalline,microcrystalline structure, amorphous structure). For example, there maybe used a material which contains a CoFe alloy, a CoFeB alloy, an Fealloy or an NiFe alloy as a main constituent and which contains addedthereto at least one element selected from the group including magneticelements, such as Gd, and other (non-magnetic) elements such as B, C, N,Si, P, Al, Ta, Mo, Cr, Nb, Cu, Zr, W, V, Hf, Gd, Mn, and Pd. Besides,amorphous materials obtained by adding at least one element selectedfrom the group including Zr, Hf, Nb, Ta and Ti to Co, Heusler materialssuch as CoMnSi, CoMnAl, CoCrFeAl, etc. may also be used.

Incidentally, where a CoFeB alloy is used for the ferromagnetic layerconstituting the storage layer, the total content of Co and Fe asferromagnetic elements in the storage layer is preferably not less than60 atom %, from the viewpoint of securing a magnetization and softmagnetic properties.

When the total content of Co and Fe is less than 60 atom %, a saturationmagnetization as a ferromagnetic layer and the coercive force may not beobtained. Besides, in general, where the CoFe has a Co:Fe ratio in therange of from 90:10 to 40:60, good soft magnetic properties withmagnetic anisotropy dispersion suppressed appropriately can bedisplayed.

In addition, the storage layer can also be configured by directlamination of a plurality of ferromagnetic layers differing in materialand/or in composition range. Besides, ferromagnetic and soft magneticlayers may be laminated, or a plurality of ferromagnetic layers may belaminated, with a soft magnetic layer interposed between the adjacentferromagnetic layers. Even in the cases of such laminations, the effectsof the present invention can be obtained.

Furthermore, in the present invention, when two or more ferromagneticlayers are laminated, with a non-magnetic layer interposed between theadjacent ferromagnetic layers, the saturation magnetization Ms of thestorage layer can be reduced, whereby the threshold Ic of the currentcan be lowered.

Besides, in such a configuration, the magnitude of interaction betweenthe ferromagnetic layers can be regulated, which is effective in thatthe magnetization reversing current can be controlled to a low leveleven when the size of the storage element is reduced to or below thesub-micrometer order.

Preferable examples of the material for the non-magnetic layer includeTi, Ta, Nb, and Cr, and these elements can be used in the elementalstate or as alloys thereof.

Incidentally, any other non-magnetic elements may be used inasmuch asthe same effect as above-mentioned can be obtained. Examples of theother non-magnetic elements include Ru, Os, Re, Ir, Au, Ag, Cu, Al, Bi,Si, B, C, Pd, Pt, Zr, Hf, W, and Mo.

In addition, desirably, the non-magnetic layer is formed by use of anon-magnetic material not liable to diffuse into the ferromagneticmaterial of the storage layer, or is formed in a sufficiently small filmthickness as compared with the above-mentioned electrode layer, underlayer, cap layer and the like so that the above-mentioned degradedcharacteristics region would not be generated widely in the storagelayer.

For example, in the case where the ferromagnetic layer of the storagelayer contains CoFeB as a main constituent and at least one non-magneticelement selected from the group including Ti, Ta, Nb and Cr is used forthe non-magnetic layer, the film thickness of the non-magnetic layer ispreferably so set that the content of the non-magnetic element based onthe whole of the storage layer is in the range of 1 to 20 atom %.

If the content is too low (the non-magnetic layer is too thin), theeffect of lowering the saturation magnetization is reduced, and it isdifficult to form the ferromagnetic layer in a good state on thenon-magnetic layer.

On the other hand, if the content is too high (the non-magnetic layer istoo thick), the saturation magnetization may be low, but the MR ratio ofthe storage element is also low, so that reading of information isdifficult to achieve. Besides, the degraded characteristics region isliable to be generated during manufacturing.

Incidentally, in place of the configuration in which two or moreferromagnetic layers are laminated, with the non-magnetic layerinterposed between the adjacent ferromagnetic layers, there may also beadopted a configuration in which a non-magnetic element or elements arecontained in the ferromagnetic material of the storage layer. In thelatter case, also, the saturation magnetization Ms of the storage layercan be lowered, whereby the threshold Ic of the current can be reduced.

The storage layer with such a configuration can be formed, for example,by use of a target containing both the ferromagnetic material and thenon-magnetic element, or by mixing the non-magnetic element into theferromagnetic material by co-sputtering.

In this case, the content of the non-magnetic element is set equally tothe case of laminating to ferromagnetic layers.

Where the non-magnetic element is contained in the ferromagneticmaterial of the storage layer, the non-magnetic element are distributedalso in the vicinity of the interface between the tunnel insulationlayer and the storage layer, which causes a lowering in the MR ratio.

Specifically, from the viewpoint of MR ratio, the laminate structure ofthe ferromagnetic and non-magnetic layers is advantageous, when comparedfor the same content of the non-magnetic element.

Furthermore, in the present invention, a non-magnetic metallic elementis contained in the spin barrier layer composed of the above-mentionedinsulating material (oxide, nitride, or fluoride), whereby theresistance of the spin barrier layer is lowered, and the increase in theresistance of the storage element due to the presence of the spinbarrier layer can be suppressed.

The spin barrier layer configured in this manner can be formed, forexample, by laminating the layer formed from at least one materialselected from the group including oxides, nitrides, and fluorides(high-resistance layer) with the non-magnetic metallic layer, and thenheat treating the laminate so as to diffuse the non-magnetic metallicelement into the high-resistance layer.

Examples of the non-magnetic metallic element to be contained in thespin barrier layer include transition metal elements such as Ti, Ta, Zr,Hf, Nb, Cr, Mo, W, V, Cu, etc. and noble metals such as Au, Pd, Pt, etc.

In the case of the transition metal element such as Ti, Ta, Zr, etc., ahigh-concentration oxygen solid solution or nitrogen solid solution isformed upon contact with the insulation layer, and mixing with theinsulation layer progresses, with the result of a change from aninsulating state to a conductive state, whereby an incomplete insulationlayer is formed, and the resistance is lowered.

On the other hand, in the case of the noble metal such as Au, Pt, etc.,the insulation layer and the metallic layer remain in the state of beingseparated into two phases, so that a condition where the insulatingmaterial is present discretely in the metallic phase or a holedinsulation layer is obtained, whereby the rise in resistance issuppressed. The thickness of such a metallic layer may be set to beequal to or greater than the thickness of the insulation layer, withoutany problem.

The upper limit of the thickness of the non-magnetic metallic layer isnot particularly present but may appear on the basis of themanufacturing process; it is considered that a thickness of about 5 nmis sufficient.

Besides, in place of the forming method in which the insulation layerand the metallic layer are laminated and the non-magnetic metallicelement are diffused by a heat treatment, there may be used a method inwhich an incomplete insulation layer containing the insulating materialand the non-magnetic metallic material in mixture from the start isformed.

In this case, the spin barrier layer is formed by use of a material inwhich the material of the insulation layer and the material of themetallic layer are mixed.

As for the film thickness of the spin barrier layer in this case, athickness of about 5 nm is considered to be sufficient.

Where the resistance of the spin barrier layer is very high, theresistance of the storage element is also very high, so that a highvoltage is necessary in recording or reading information into or fromthe storage element. Besides, the variation in the resistance by thetunnel magnetoresistance effect of the MTJ element is small relative tothe resistance of the storage element, so that the MR ratio is degraded,making it difficult to read the recorded information.

On the other hand, where the spin barrier layer is configured to containthe non-magnetic metallic element, the increase in the resistance of thestorage element due to the presence of the spin barrier layer can besuppressed; therefore, a surplus voltage is not necessary in recordingor reading information into or from the storage element, and the MRratio is not degraded.

In addition, since the increase in the resistance of the storage elementdue to the presence of the spin barrier layer is suppressed, the filmthickness of the spin barrier layer may be set to be comparable to orgreater than of the tunnel insulation layer, without any problem.

Taking into account the MR ratio and the characteristics of the storageelement, the content of the non-magnetic metallic element is preferablyso set that the areal resistance of the spin barrier layer will be notmore than 10 Ωμm².

Meanwhile, depending on the combination of the ferromagnetic material ofthe storage layer with the insulating material of the spin barrierlayer, the magnetic properties of the storage layer may be changed duethe diffusion or mixing of the oxygen atoms or the like contained in thespin barrier layer into the storage layer.

Taking this into consideration, in the present invention, a non-magneticmetallic layer is further provided between the storage layer and thespin barrier layer, whereby it is possible to control the variations inthe magnetic properties due to the diffusion or mixing of the oxygenatoms or the like contained in the spin barrier layer into the storagelayer.

As the material for the non-magnetic metallic layer provided between thestorage layer and the spin barrier layer, there may be used anon-magnetic metal which itself has a small spin pumping effect, forexample, Cu, Ta or the like. These elements are not limitative, andthere may also be used such elements as Al, Si, Ti, Zn, Zr, Nb, Mo, Hf,W, and Ru.

Desirably, this non-magnetic metallic layer is formed by use of anon-magnetic material not liable to diffuse into the ferromagneticmaterial of the storage layer, or is formed in a sufficiently small filmthickness as compared with the above-mentioned electrode layer, underlayer, cap layer and the like so that the above-mentioned degradedcharacteristics region would not be generated widely in the storagelayer.

The configuration in which the non-magnetic metallic layer is thusprovided between the storage layer and the spin barrier layer isapplicable to the case where the storage layer is on the upper side ofthe spin barrier layer and to the case where the spin barrier layer ison the upper side of the storage layer; however, the effect of theconfiguration is considered to be greater particularly where the spinbarrier layer is on the upper side, since the spin barrier layer isformed after the storage layer.

In the storage element in the present invention, desirably, the pinnedmagnetization layer has a unidirectional anisotropy, and the storagelayer has a uniaxial anisotropy.

In addition, the film thicknesses of the pinned magnetization layer andthe storage layer are desirably in the range of 1 to 40 nm and in therange of 1 to 10 nm, respectively.

The other configurations of the storage element may be the same as theconfigurations, known in the past, of a storage element for recordinginformation by spin injection.

The pinned magnetization layer has its magnetization direction fixed bybeing composed of a ferromagnetic layer or by utilizingantiferromagnetic coupling between an antiferromagnetic layer and aferromagnetic layer.

In addition, the pinned magnetization layer is composed of a singleferromagnetic layer, or has a laminate ferri structure in which aplurality of ferromagnetic layer are laminated, with a non-magneticlayer between the adjacent ferromagnetic layers. Where the pinnedmagnetization layer has the laminate ferri structure, the sensitivity ofthe pinned magnetization layer to external magnetic fields can belowered, so that it is possible to suppress unnecessary variations inthe magnetization of the pinned magnetization layer due to externalmagnetic fields, and to make the storage element operate stably.Furthermore, it is possible to regulate the film thickness of each ofthe ferromagnetic layers, and to suppress leakage of magnetic field fromthe pinned magnetization layer.

Examples of the material usable for the ferromagnetic layersconstituting the pinned magnetization layer in the laminate ferristructure include Co, CoFe, and CoFeB. Examples of the material usablefor the non-magnetic layer include Ru, Re, Ir, and Os.

Examples of the material for the antiferromagnetic layer include suchmagnetic materials as FeMn alloy, PtMn alloy, PtCrMn alloy, NiMn alloy,IrMn alloy, and NiO, Fe₂O₃.

Besides, it is possible, by adding a non-magnetic element such as Ag,Cu, Au, Al, Si, Bi, Ta, B, C, O, N, Pd, Pt, Zr, Hf, Ir, W, Mo, Nb, etc.to the magnetic material, to control magnetic properties and otherproperties such as crystal structure, crystallinity, substancestability, etc.

In addition, as the film configuration of the storage element, aconfiguration in which the storage layer is disposed on the upper sideof the pinned magnetization layer and a configuration in which thestorage layer is disposed on the lower side of the pinned magnetizationlayer can be used without any problem.

Incidentally, as for the method of reading the information recorded inthe storage layer of the storage element, a magnetic layer serving as areference for information may be provided on one side of the storagelayer of the storage element, with a thin insulation layer therebetween,and the information may be read by use of a ferromagnetic tunnel currentflowing through the insulation layer or may be read by use of themagnetoresistance effect.

Now, specific embodiments of the present invention will be describedbelow.

As an embodiment of the present invention, a schematic configurationdiagram (perspective view) of a memory is shown in FIG. 1.

The memory includes storage elements capable of holding information interms of magnetization state, the storage elements being disposed nearintersections between two kinds of address wirings (e.g., word lines andbit lines) intersecting orthogonally.

Specifically, a drain region 8, a source region 7, and a gate electrode1 which constitute a selection transistor for selecting each memory cellare formed at a portion, isolated by an element isolation layer 2, of asemiconductor substrate 10 such as a silicon substrate. Of thesecomponent, the gate electrode 1 functions also as one address wiring(e.g., word line) extending in the front-rear direction in the figure.

The drain region 8 is formed in common for selection transistorsarranged on the left and right sides in the figure, and a wiring 9 isconnected to the drain region 8.

A storage element 3 is disposed between the source region 7 and theother address wiring (e.g., bit line) 6 disposed on the upper side andextending in the left-right direction in the figure. The storage element3 has a storage layer composed of a ferromagnetic layer of which themagnetization direction can be reversed by spin injection.

In addition, the storage element 3 is disposed near the intersectionbetween the two kinds of wirings 1 and 6.

The storage element 3 is connected to the bit line 6 and the sourceregion 7 through upper and lower contact layers 4, respectively.

This ensures that the magnetization direction of the storage layer canbe reversed through spin injection by passing a current in the verticaldirection in the storage element 3 by way of the two kinds of wirings 1and 6.

Besides, a sectional view of the storage element 3 in the memoryaccording to the present embodiment is shown in FIG. 2.

As shown in FIG. 2, the storage element 3 has a pinned magnetizationlayer 31 provided beneath a storage layer 17 of which the direction ofmagnetization M1 can be changed by spin injection.

An insulation layer 16 serving as a tunnel barrier layer (tunnelinsulation layer) is provided between the storage layer 17 and thepinned magnetization layer 31, and the storage layer 17 and the pinnedmagnetization layer 31 constitute an MTJ element.

In addition, an under layer 11 is formed beneath the pinnedmagnetization layer 31, and a cap layer 19 is formed as an uppermostlayer.

Furthermore, the pinned magnetization layer 31 has an exchange biaslaminate ferri structure.

Specifically, two ferromagnetic layers 13 and 15 are laminated, with anon-magnetic layer 14 therebetween, to be in antiferromagnetic coupling,and an antiferromagnetic layer 12 is disposed beneath the ferromagneticlayer 13, whereby the pinned magnetization layer 31 is configured. Theferromagnetic layer 13 has its direction of magnetization M13 fixed bythe antiferromagnetic layer 12.

Since the two ferromagnetic layers 13 and 15 are in antiferromagneticcoupling, the magnetization M13 of the ferromagnetic layer 13 isrightward, while the magnetization M15 of the ferromagnetic layer 15 isleftward; thus, these magnetization directions are opposite to eachother.

This ensures that the magnetic fluxes leaking from the ferromagneticlayers 13 and 15 in the pinned magnetization layer 31 cancel each other.

The material of the storage layer 17 is not particularly limited, andalloy materials including one or more of iron, nickel and cobalt can beused. Further, the material of the storage layer 17 may contain atransition metal element such as Nb, Zr, Gd, Ta, Ti, Mo, Mn, Cu, etc.,and/or a light element such as Si, B, C, etc. Further, the storage layer17 may be configured by direct lamination of a plurality of films formedof different materials (without any non-magnetic layer interposed); forexample, a laminate film of CoFe/NiFe/CoFe may be used.

The materials of the ferromagnetic layers 13 and 15 in the pinnedmagnetization layer 31 are not particularly limited, and alloy materialsincluding one or more of iron, nickel and cobalt can be used. Further,the materials may contain a transition metal element such as Nb, Zr, Gd,Ta, Ti, Mo, Mn, Cu, etc., and/or a light element such as Si, B, C, etc.In addition, the ferromagnetic layers 13 and 15 may be configured bydirect lamination of a plurality of films formed of different materials(without any non-magnetic layer interposed); for example, a laminatefilm of CoFe/NiFe/CoFe may be used.

Examples of the material usable for the non-magnetic layer 14constituting the laminate ferri structure of the pinned magnetizationlayer 31 include ruthenium, copper, chromium, gold, and silver.

The film thickness of the non-magnetic layer 14 varies depending on thematerial thereof, and is preferably in the range of about 0.5 to 2.5 nm.

The film thicknesses of the ferromagnetic layers 13 and 15 in the pinnedmagnetization layer 31 and of the storage layer 17 may be regulated asoccasion demands, and are appropriately in the range of 1 to 5 nm.

In this embodiment, particularly, a spin barrier layer 18 forrestraining the diffusion of spin polarized electrons is provided on theside, opposite to the pinned magnetization layer 31, of the storagelayer 17 in the storage element 3, namely, on the upper side of thestorage layer 17. The spin barrier layer 18 is disposed between thestorage layer 17 and the cap layer 19, and is in contact with thestorage layer 17.

Furthermore, the spin barrier layer 18 is composed of at least onematerial selected from the group including oxides, nitrides, andfluorides.

Specifically, the spin barrier layer 18 is configured by use of at leastone material selected from the group including oxides, nitrides, andfluorides, or by use of a material which contains at least one materialselected from the group including oxides, nitrides, and fluorides as amain constituent and which contains a small amount of other element(e.g., metallic element) added thereto.

With such a spin barrier layer 18 provided, the diffusion of spinpolarized electrons is restrained, and the diffusion of metallic elementfrom the cap layer 19 into the storage layer 17 is restrained.

Furthermore, in the present embodiment, where the insulation layer 16 asan intermediate layer is a magnesium oxide layer, the magnetoresistancevariation ratio (MR ratio) can be enhanced.

By such enhancement of the MR ratio, also, it is possible to enhance thespin injection efficiency and thereby to reduce the current densitynecessary for reversing the direction of magnetization M1 of the storagelayer 17.

The storage element 3 in this embodiment can be manufactured bycontinuously forming the layers ranging from the under layer 11 to thecap layer 19 in a vacuum apparatus and thereafter forming the pattern ofthe storage element 3 by such processing as etching.

According to this embodiment as above-described, the spin barrier layer18 composed of at least one material selected from the group includingoxides, nitrides, and fluorides is provided on the side, opposite to thepinned magnetization layer 31, of the storage layer 17, so that thediffusion of spin polarized electrons is restrained by the spin barrierlayer 18. This ensures that spin accumulation occurs in the storagelayer 17, and the spin pumping phenomenon at the time of reversing thedirection of magnetization M1 of the storage layer 17 is restrained.

Therefore, it is possible to prevent the spin injection efficiency frombeing worsened due to the spin pumping phenomenon, and thereby toenhance the spin injection efficiency.

In addition, since the spin barrier layer 18 restrains the diffusion ofmetallic element from the cap layer 19 into the storage layer 17 andpermits the ferromagnetic material of the storage layer 17 to displayits intrinsic characteristics, it is possible to enhance the thermalstability index Δ of the storage layer 17. This enhances also thethermal stability of the storage layer 17.

With the thermal stability of the storage layer 17 thus enhanced, theoperation range in recording information by passing a current in thestorage element 3 can be enlarged, so that it is possible to secure awide operation margin and to permit the storage element 3 to operatestably.

Therefore, a memory capable of operating stably and being high inreliability can be realized.

In addition, since the spin injection efficiency can be enhanced, thecurrent necessary for reversing the direction of magnetization M1 of thestorage layer 17 by spin injection can be reduced.

Therefore, the power consumption of the memory including the storageelements 3 can be reduced.

Besides, the memory which includes the storage elements 3 shown in FIG.2 and which is configured as shown in FIG. 1 is advantageous in that ageneral semiconductor MOS forming process can be applied inmanufacturing the memory.

Therefore, the memory in this embodiment can be applicable as ageneral-purpose memory.

Particularly, the storage element 3 shown in FIG. 2 is enhanced inthermal resistance of the storage layer 17 by the spin barrier layer 18,so that the magnetic properties of the storage layer 17 would not bedegraded even upon annealing at 340 to 400° C., and the generalsemiconductor MOS forming process can be readily applied.

Now, as another embodiment of the present invention, a schematicconfiguration diagram (sectional view) of a storage element is shown inFIG. 3.

The storage element 30 in this embodiment has a configuration in which apinned magnetization layer 31 is provided on the lower side of a storagelayer 17 of which the direction of magnetization M1 is changed by spininjection, and a pinned magnetization layer 32 is provided on the upperside of the storage layer 17. Specifically, the upper and lower twopinned magnetization layers 31 and 32 are provided for the storage layer17.

The upper pinned magnetization layer 32 has only a single ferromagneticlayer 20 and an antiferromagnetic layer 12 thereon.

The direction of magnetization M20 of the ferromagnetic layer 20 in thepinned magnetization layer 32 is fixed by the antiferromagnetic layer12.

In addition, a cap layer 19 is formed on the antiferromagnetic layer 12in the upper pinned magnetization layer 32.

In this embodiment, particularly, a spin barrier layer 18 forrestraining the diffusion of spin polarized electrons is provided on theside, opposite to the lower pinned magnetization layer 31 and a tunnelinsulation layer 16, of the storage layer 17 of the storage element 30,i.e., on the upper side of the storage layer 17.

Further, the spin barrier layer 18 is configured by use of at least onematerial selected from the group including oxides, nitrides, andfluorides.

The spin barrier layer 18 is disposed between the storage layer 17 andthe ferromagnetic layer 20 in the upper pinned magnetization layer 32,and is in contact with the storage layer 17.

Therefore, the storage layer 17, the spin barrier layer 18 and the upperpinned magnetization layer 32 constitute an MTJ element. Specifically,in this MTJ element, the spin barrier layer 18 functions also as anintermediate layer between the storage layer 17 and the pinnedmagnetization layer 32.

The other configurations are the same as those of the storage element 3shown in FIG. 2 above, and, therefore, they are denoted by the samesymbols as used above, and descriptions of them are omitted.

In addition, a memory configured in the same manner as the memory shownin FIG. 1 can be configured by use of the storage elements 30 accordingto this embodiment.

Specifically, the storage elements 30 are disposed near intersectionsbetween two kinds of address wirings to compose a memory, and currentsin the vertical direction (lamination direction) are passed in some ofthe storage elements 30 by way of the two kinds of wirings, so as toreverse the direction of magnetization M1 of the storage layer 17 in thestorage elements 30 by spin injection, whereby information can berecorded in the storage elements 30.

This provides the advantage that a general semiconductor MOS formingprocess can be applied in manufacturing the memory including the storageelements 30, and ensures that the memory including the storage elements30 according to this embodiment can be applied as a general-purposememory.

Furthermore, in this embodiment, where the tunnel insulation layer 16 asan intermediate layer is composed of a magnesium oxide layer, themagnetoresistance variation ratio (MR ratio) can be enhanced.

With such enhancement of MR ratio, also, the spin injection efficiencycan be enhanced, and the current density necessary for reversing thedirection of magnetization M1 of the storage layer 17 can be reduced.

According to the present embodiment as above-described, the spin barrierlayer 18 composed of at least one material selected from the groupincluding oxides, nitrides, and fluorides is provided on the side,opposite to the lower pinned magnetization layer 31 and the tunnelinsulation layer 16, of the storage layer 17. Therefore, like in thepreceding embodiment, the spin pumping phenomenon at the time ofreversing the direction of magnetization M1 of the storage layer 17 isrestrained, and the spin injection efficiency can be enhanced.

In addition, since the thermal stability of the storage layer 17 isenhanced, in the same manner as in the preceding embodiment, it ispossible to secure a wide operation margin and to permit the storageelement 3 to operate stably.

Furthermore, in this embodiment, the pinned magnetization layers 31 and32 are provided for the storage layer 17, with the tunnel insulationlayer 16 and the pin barrier layer 18 interposed therebetween on thelower side and the upper side. By the effect of this configuration also,therefore, it is possible to reduce the current necessary for reversingthe direction of magnetization M1 of the storage layer 17.

Accordingly, it is possible to realize a memory which operates stablyand is high in reliability, and to reduce the power consumption of thememory including the storage elements 30.

Now, as a further embodiment of the present invention, a schematicconfiguration diagram (sectional view) of a storage element is shown inFIG. 4.

The storage element 40 in this embodiment is particularly characterizedin that two ferromagnetic layers 17 and 22 are laminated, with anon-magnetic layer 21 therebetween, to constitute a storage layer 33.

In this case, the effective content of non-magnetic element in thestorage layer 33 is determined according to the film thickness of thenon-magnetic layer 21.

In addition, in the two ferromagnetic layers 17 and 22 in the storagelayer 33, the magnetization M1A of the ferromagnetic layer 17 and themagnetization M1B of the ferromagnetic layer 22 are in the samedirection (parallel directions), and the sum total of the magnetizationsM1A and M1B of the two layers constitutes the magnetization M1 of thestorage layer 33.

As the material of the ferromagnetic layers 17 and 22 in the storagelayer 33, for example, CoFeB may be used.

Besides, as the material for the non-magnetic layer 21 in the storagelayer 33, preferably, there is used a non-magnetic metallic materialcomposed of at least one selected from the group including Ti, Ta, Nb,and Cr.

The non-magnetic layer 21 in the storage layer 33 is desirably soconfigured that the above-mentioned degraded characteristics region willnot be widely formed in the storage layer 33, by using a non-magneticmaterial not liable to diffuse into the ferromagnetic material of thestorage layer 33, or by setting the film thickness of the non-magneticlayer 21 to be sufficiently small, as compared with the above-mentionedelectrode layer, under layer, cap layer 19, etc.

For example, in the case where the ferromagnetic layers 17 and 22 in thestorage layer 33 contain CoFeB as a main constituent and where at leastone non-magnetic element selected from the group including Ti, Ta, Nb,and Cr is used for forming the non-magnetic layer 21, the film thicknessof the non-magnetic layer 21 is so set that the content of thenon-magnetic element based on the whole part of the storage layer 33 isin the range of 1 to 20 atom %.

The other configurations of the storage element 40 are the same as thoseof the storage element 3 in the preceding embodiment shown in FIG. 2, sothat they are denoted by the same symbols as used above and descriptionsof them are omitted.

The film thicknesses of the ferromagnetic layers 13, 15, 17 and 22 inthe pinned magnetization layer 31 and the storage layer 33 areappropriately in the range of 1 to 5 nm.

The storage element 40 in the present embodiment can be manufactured bycontinuously forming the layers ranging from the under layer 11 to thecap layer 19 in a vacuum apparatus and thereafter forming the pattern ofthe storage element 40 by such processing as etching.

In addition, a memory configured in the same way as the memory shown inFIG. 1 can be configured by use of the storage elements 40 according tothis embodiment.

Specifically, the storage elements 40 are arranged near intersectionsbetween two kinds of address wirings to compose a memory, and currentsin the vertical direction (lamination direction) are passed in some ofthe storage elements 40 by way of the two kinds of wirings, so as toreverse the direction of the magnetization M1 (M1A, M1B) of the storagelayer 33 by spin injection, whereby information can be recorded in thestorage elements 40.

This is advantageous in that a general semiconductor MOS forming processcan be applied in manufacturing the memory including the storageelements 40, and the memory including the storage elements 40 in thisembodiment can be applied as a general-purpose memory.

According to this embodiment as above, the spin barrier layer 18 isprovided on the side, opposite to the pinned magnetization layer 31, ofthe storage layer 33, so that the spin pumping phenomenon at the time ofreversing the direction of magnetization M1 (M1A, M1B) of the storagelayer 33 is restrained, in the same manner as in the storage element 3in the preceding embodiment shown in FIG. 2, whereby the spin injectionefficiency can be enhanced.

Besides, since the thermal stability of the storage layer 33 can beenhanced, in the same manner as in the preceding embodiment, it ispossible to secure a wide operation margin and to permit the storageelement 40 to operate stably.

Further, according to the present embodiment, the storage layer 33 hasthe two ferromagnetic layers 17 and 22 laminated, with the non-magneticlayer 21 therebetween, so that the saturation magnetization Ms of thestorage layer 33 can be lowered, which also contributes to the reductionin the threshold Ic of the current.

In addition, since the magnitude of the interaction between theferromagnetic layers 17 and 22 can be regulated, the current thresholdIc can be effectively restrained from being increased even when the sizeof the storage element 40 is reduced down to or below the sub-micrometerorder.

Therefore, it is possible to realize a memory which operates stably andis high in reliability, and to reduce the power consumption of thememory including the storage elements 40.

Incidentally, in the storage element 40 according to this embodiment asabove-described, there may be the case, depending on the relationshipbetween the film thickness of the ferromagnetic layers 17 and 22 and thefilm thickness of the non-magnetic layer 21, where the magnetization M1Aof the ferromagnetic layer 17 and the magnetization M1B of theferromagnetic layer 22 are in the opposite directions (anti-paralleldirections) and the two ferromagnetic layers 17 and 22 are in exchangecoupling.

Even in such a case, the effects of respective provision of the spinbarrier layer 18 and the non-magnetic layer 21 can be obtained in thesame manner as above.

Besides, while Ti, Ta, Nb, and Cr have been given as candidates for thenon-magnetic element constituting the non-magnetic layer 21 in thisembodiment as above-described, any other non-magnetic elements may alsobe adopted inasmuch as the same effect as above-mentioned can beobtained.

Furthermore, in place of the configuration in which two or moreferromagnetic layers 17, 22 are laminated, with the non-magnetic layer21 interposed between the adjacent ferromagnetic layers, as in thisembodiment, there may be adopted a configuration in which a non-magneticelement or elements are contained in the ferromagnetic materialconstituting the storage layer. In the same manner as above, thisconfiguration also makes it possible to lower the saturationmagnetization Ms of the storage layer, whereby the threshold Ic of thecurrent can be reduced.

In this case, also, the content of the non-magnetic element can be setin the same manner as in the case of lamination of layers.

Now, as yet another embodiment of the present invention, the schematicconfiguration of a storage element will be described below.

According to the present embodiment, in the storage element 3 with theconfiguration as shown in FIG. 2, a non-magnetic metallic element orelements are further contained in the material which constitutes thespin barrier layer 18 and which is selected from the group includingoxides, nitrides, and fluorides.

This configuration makes it possible to reduce the resistance of thespin barrier layer 18, as compared with the case where the spin barrierlayer 18 is composed only of at least one material selected from thegroup including oxides, nitrides, and fluorides.

Examples of the non-magnetic metallic element to be contained in thespin barrier layer 18 include transition metal elements and noblemetals, such as Ti, Ta, Zr, Hf, Nb, Cr, Mo, W, V, Cu, Au, Pd, and Pt.

The spin barrier layer 18 thus containing the non-magnetic metallicelement can be formed, for example, as follows.

As shown in a sectional view of a laminate film to be a storage element3 in FIG. 5, a high-resistance layer 41 composed of an insulatingmaterial selected from the group including oxides, nitrides, andfluorides and a non-magnetic metallic layer 42 are laminated on eachother, to form a laminate film 43 which will be the storage element 3.

Thereafter, the non-magnetic metallic element are diffused from thenon-magnetic metallic layer 42 into the high-resistance layer 41,whereby a spin barrier layer 18 can be formed which has been lowered inresistance by the non-magnetic metallic element and has become anincomplete insulation layer.

Preferably, the spin barrier layer 18 containing the non-magneticmetallic element is so controlled to have an areal resistance of notmore than 10 Ωμm².

Since the resistance of the spin barrier layer 18 is reduced by thenon-magnetic metallic element, even in the case where, for example, thesame insulating material as for the tunnel insulation layer 16 is usedfor the spin barrier layer 18 and where the spin barrier layer 18 hasthe same film thickness as that of the tunnel insulation layer 16, thespin barrier layer 18 can be made to have a sufficiently low resistance,as compared with the tunnel insulation layer 16.

This ensures that, notwithstanding the presence of the spin barrierlayer 18, the variation in the resistance of the storage element 3 bythe magnetoresistance effect in the MTJ element having the tunnelinsulation layer 16 can be detected without any problem, and, therefore,the information recorded in the storage element 3 can be read.

Incidentally, the non-magnetic metallic layer 42 for diffusing thenon-magnetic metallic element may be completely lost or may be partlyleft, upon the diffusion of the non-magnetic metallic element into thehigh-resistance layer 41 by a heat treatment.

In the case where the non-magnetic metallic layer 42 is partly left evenafter the heat treatment, a configuration in which the non-magneticmetallic layer 42 is present between the spin barrier layer 18 and thecap layer 19, in contrast to the configuration of the storage element 3shown in FIG. 2.

In this case, since the material constituting the non-magnetic metalliclayer 42 is the same as or similar to the material of the cap layer 19generally composed of a non-magnetic metal, the non-magnetic metalliclayer 42 can be regarded as part of the cap layer 19.

Besides, if the non-magnetic metallic element of the non-magneticmetallic layer 42 is diffused into the storage layer 17 on the lowerside of the spin barrier layer 18, the above-mentioned degradedcharacteristics region might be formed.

Therefore, it is desirable to control the conditions of the heattreatment and the like in such a manner that the diffusion of thenon-magnetic metallic element into the storage layer 17 is restrained assecurely as possible. Besides, in the case of forming the laminate film43 shown in FIG. 5, for example, the film thickness of the non-magneticmetallic layer 42 is reduced to or below a certain level.

According to this embodiment as above-described, like in the precedingembodiments shown in FIG. 2, the spin pumping phenomenon at the time ofreversal of the direction of magnetization M1 of the storage layer 17 isrestrained by the spin barrier layer 18, whereby the spin injectionefficiency can be enhanced.

Besides, since the thermal stability of the storage layer 17 can beenhanced, like in the previous embodiments, it is possible to secure awide operation margin and to permit the storage element 3 to operatestably.

Furthermore, since the spin barrier layer 18 contains the non-magneticmetallic element, the resistance of the spin barrier layer 18 can belowered. Therefore, the overall resistance of the storage layer 3 can berestrained from being raised too much due to the presence of the spinbarrier layer 18.

This ensures that, at the time of recording or reading information intoor from the storage element 3, a surplus voltage is not necessary andthe MR ratio is not degraded.

Therefore, it is possible to realize a memory which operates stably andis high in reliability, and to reduce the power consumption of thememory including the storage elements 3.

Now, as a yet further embodiment of the present invention, a schematicconfiguration diagram of a storage element is shown in FIG. 6.

The storage element 50 in this embodiment has particularly a laminateconfiguration in which a spin barrier layer 18 is not provided in directcontact with a storage layer 17 but is provided on one side of thestorage layer 17, with a non-magnetic metallic layer 23 interposedtherebetween.

With the non-magnetic metallic layer 23 thus provided between thestorage layer 17 and the spin barrier layer 18, variations in themagnetic properties of the storage layer 17 due to the diffusion ormixing or the like of the oxygen atoms and the like contained in thespin barrier layer 18 into the storage layer 17 can be suppressed.

As the material for the non-magnetic metallic layer 23 provided betweenthe storage layer 17 and the spin barrier layer 18, there can be used anon-magnetic metal which itself shows little spin pumping effect, forexample, Cu, Ta or the like. Further, use of such metals as Al, Si, Ti,Zn, Zr, Nb, Mo, Hf, W, and Ru may also be considered.

The non-magnetic metallic layer 23 also is desirably so configured thatthe above-mentioned degraded characteristics region would not be widelyformed in the storage layer 17, by using a non-magnetic material notliable to diffuse into the ferromagnetic material of the storage layer17, or by setting the film thickness of the non-magnetic metallic layer23 to be sufficiently small, as compared with the above-mentionedelectrode layer, under layer, cap layer 19 and the like.

The other configurations of the storage element 50 are the same as thoseof the storage element 3 in the preceding embodiment shown in FIG. 2above, so that they are denoted by the same symbols as used above anddescriptions of them are omitted.

In addition, a memory configured in the same manner as the memory shownin FIG. 1 can be configured by use of the storage elements 50 accordingto the present embodiment.

Specifically, the storage elements 50 are arranged near intersectionsbetween two kinds of address wirings, and currents in the verticaldirection (lamination direction) are passed in some of the storageelements 50 by way of the two kinds of wirings, to reverse the directionof magnetization M1 of the storage layer 17 by spin injection, wherebyinformation can be recorded in the storage elements 50.

This is advantageous in that a general semiconductor MOS forming processcan be applied at the time of manufacturing the memory including thestorage elements 50, and the memory including the storage elements 50according to the present embodiment can be applied as a general-purposememory.

According to this embodiment as above-described, the spin barrier layer18 is provided on the side, opposite to the pinned magnetization layer31, of the storage layer 17. Like in the cases of the storage elements3, 30, and 40 according to the previous embodiments, the spin pumpingphenomenon at the time of reversal of the direction of magnetization M1of the storage layer 17 is restrained, and the spin injection efficiencycan be enhanced.

Besides, like in the previous embodiments, the thermal stability of thestorage layer 17 can be enhanced, so that it is possible to secure awide operation margin and to permit the storage element 50 to operatestably.

Furthermore, according to the present embodiment, the non-magneticmetallic layer 23 is provided between the spin barrier layer 18 and thestorage layer 17; therefore, variations in the magnetic properties ofthe storage layer 17 due to the diffusion or mixing or the like of theoxygen atoms and the like contained in the spin barrier layer 18 intothe storage layer 17 can be restrained.

This ensures that the ferromagnetic material constituting the storagelayer 17 can retain good magnetic properties intrinsic thereof, whichalso contributes to enhancement of the spin injection efficiency.

Therefore, it is possible to realize a memory which operates stably andis high in reliability, and to reduce the power consumption of thememory including the storage elements 50.

In the present invention, the film configurations of the storageelements 3, 30, 40, and 50 shown in the embodiments above are notlimitative, and various film configurations can be adopted.

Here, in the configurations of the storage elements according to theembodiments of the present invention, their characteristics wereexamined by specifically selecting the material, film thickness and thelike of each layer.

A practical memory includes semiconductor circuits for switching and thelike in addition to the storage elements as shown in FIG. 1, but, here,investigations were conducted on a wafer provided only with the storageelements, for the purpose of examining the magnetization reversalcharacteristics of the storage layer.

Experiment 1 Examples

A 2 μm-thick thermal oxide film was formed on a 0.575 mm-thick siliconsubstrate, and a storage element 40 configured as shown in FIG. 4 wasformed thereon.

Specifically, in the storage element 40 configured as shown in FIG. 4,the material and film thickness of each layer were selected as follows.The under layer 11 was composed of a 3 nm-thick Ta film, theantiferromagnetic layer 12 was composed of a 30 nm-thick PtMn film, theferromagnetic layer 13 for constituting the pinned magnetization layer31 was composed of a 2.2 nm-thick CoFe film, the ferromagnetic layer 15was composed of a 2 nm-thick CoFeB film, the non-magnetic layer 14 forconstituting the pinned magnetization layer 31 of the laminate ferristructure was composed of a 0.8 nm-thick Ru film, the tunnel insulationlayer 16 was composed of a 0.8 nm-thick MgO film, the ferromagneticlayers 17 and 22 for constituting the storage layer 33 were eachcomposed of a 1 nm-thick CoFeB film, the non-magnetic layer 21 and thespin barrier layer 18 were each composed of a 0.8 nm-thick MgO film, andthe cap layer 19 was composed of a 5 nm-thick Ta film.

In the just-mentioned film configuration, the composition of the CoFeBfilm was Co₄₈Fe₃₂B₂₀ (atom %), the composition of the CoFe film wasCo₉₀Fe₁₀ (atom %), and the composition of the PtMn film was Pt₃₈Mn₆₂(atom %).

The other layers than the tunnel insulation layer 16 and the spinbarrier layer 18, both composed of an MgO film, were formed by a DCmagnetron sputtering method.

The tunnel insulation layer 16 and the spin barrier layer 18, bothcomposed of an MgO film, were formed by an RF magnetron sputteringmethod.

Furthermore, after the layers of the storage element 40 were formed, theproduct was heat treated in a heat treatment furnace in a magnetic fieldunder the conditions of 10 kOe, 360° C., and for two hours, thereby toperform a normalizing heat treatment of the PtMn film provided as theantiferromagnetic layer 12.

Next, the word line portion was masked by photolithography, andthereafter the laminate film in other portions than the word lineportion was subjected to selective etching using an Ar plasma, to form aword line (lower electrode). In this case, the other portions than theword line portion were etched down to a depth of 5 nm of the substrate.

Thereafter, a mask in the pattern of the storage element 40 was formedby an electron beam drawing apparatus, and the laminate film wassubjected to selective etching, to form the storage element 40. Theother portions than the storage element 40 portion were etched down to adepth of 10 nm of the antiferromagnetic layer 12.

Incidentally, in a storage element to be served to evaluation ofcharacteristics, the resistance of the tunnel insulation layer has to besuppressed, since it is necessary to pass a sufficient current in thestorage element so as to generate a spin torque necessary formagnetization reversal. In view of this, the pattern of the storageelement 40 was set to be an elliptic shape with a minor axis of 90 nmand a major axis of 180 nm so that the storage element 40 would have anareal resistance of 20 Ωμm².

Next, the other portions than the storage element 40 portion wereinsulated by sputtering Al₂O₃ in a thickness of about 100 nm thereon.

Thereafter, a bit line to be an upper electrode and measurement padswere formed by use of photolithography, to produce a sample of storageelement 40.

By the just-mentioned manufacturing method, samples of storage element40 differing in the material (non-magnetic element) for the non-magneticlayer 21 and in the film thickness of the non-magnetic layer 21 wereprepared.

The non-magnetic element to be used for the non-magnetic layer 21 wasselected to be any one of Ti, Ta, Nb, and Cr, and, for each magneticelement, six values of 0.1 nm, 0.2 nm, 0.3 nm, 0.4 nm, 0.5 nm, and 1.0nm were selected as the film thickness of the non-magnetic layer 21, inpreparing the samples. These film thickness values correspond tocontents (atom %) of the non-magnetic element, based on the whole partof the storage layer 33, of 3%, 6%, 8%, 11%, 13%, and 26%, respectively.

Thus, four kinds of non-magnetic elements were used, and six values offilm thicknesses were adopted for each non-magnetic element; therefore,a total of 24 kinds of samples were prepared.

In addition, as other Examples, also for the storage element 3 havingthe storage layer 17 not provided with the non-magnetic layer 21, asshown in FIG. 2, samples were prepared by the same manufacturing methodas above, while setting the film thickness of the storage layer 17 at 2nm.

Comparative Examples

Furthermore, as Comparative Examples, for the storage element the sameas the storage element 40 shown in FIG. 4 except for being not providedwith the spin barrier layer 18, as shown in a sectional diagram in FIG.7A, 24 kinds of samples made to differ in the non-magnetic element ofthe non-magnetic layer 21 and in the film thickness of the non-magneticlayer 21 in the same manner as in Examples were prepared by the samemanufacturing method as above.

In addition, as other Comparative Examples, also for the storage elementthe same as the storage element 3 shown in FIG. 2 except for being notprovided with the spin barrier layer 18, as shown in a sectional diagramin FIG. 7B, samples of storage element were prepared by the samemanufacturing method as above, while setting the film thickness of thestorage layer at 2 nm.

[Measurement of Thermal Stability Index Δ]

First, for the samples of storage element in Examples and ComparativeExamples, the above-mentioned thermal stability index Δ was measured.

For the cases where the non-magnetic element of the non-magnetic layer21 constituting the storage layer 33 was Ti and the film thickness ofthe non-magnetic layer 21 is 0.2 nm, the measurement results for thesample (of the storage element 40 shown in FIG. 4) with the spin barrierlayer 18 and the sample (of the storage element shown in FIG. 7A)without the spin barrier layer 18 are shown in FIG. 8.

As seen from FIG. 8, the thermal stability index Δ is about 48 in thecase of the sample without the spin barrier layer 18 and is increased toabout 71 in the case of the sample with the spin barrier layer 18. Thismeans an enhancement of the thermal stability, indicating that thethermal stability of the storage element can be enhanced by providingthe spin barrier layer 18. Usually, for use as a storage element, it isdesirable that the thermal stability index Δ is not less than 70.

The same or equivalent results were obtained also in the cases where thenon-magnetic element and the film thickness were other than theabove-mentioned.

[Measurement of TMR Ratio]

For the purpose of evaluating the read characteristics of storageelements, measurement of TMR ratio was conducted by the followingmethod.

Measurement of resistance was conducted in the condition where a voltageof 100 mV was impressed on the storage element while applying an ACmagnetic field of 10 Hz in the major axis direction of the storageelement.

When the direction of magnetization M1 of the storage layer 33 isreversed by an external magnetic field, the resistance of the storageelement is varied. Here, there was adopted a definition of TMRratio=[R(anti-parallel)−R(parallel)]/R(parallel), where R(anti-parallel)is the resistance in the case where the direction of magnetization M1 ofthe storage layer 33 is anti-parallel to the direction of magnetizationM15 of the ferromagnetic layer 15 (on the storage layer 33 side) of thepinned magnetization layer 31, and R(parallel) is the resistance in thecase where the direction of magnetization M1 is parallel to thedirection of magnetization M15.

The measurement of the TMR ratio was conducted for the samples ofstorage element in Examples and Comparative Examples.

The measurement results of TMR ratio are shown in FIGS. 9A to 9D. FIGS.9A to 9D each show the relationship between the thickness (filmthickness) of the non-magnetic layer 21 and the TMR ratio, in the caseswhere the non-magnetic layer 21 was Ti layer (FIG. 9A), Ta layer (FIG.9B), Nb layer (FIG. 9C), and Cr layer (FIG. 9D), respectively. In eachof the figures, the TMR ratio of the sample of the storage element 3shown in FIG. 2 and the TMR ratio of the sample of the storage elementshown in FIG. 7B are presented as the cases where the thickness of thenon-magnetic layer 21 was 0 nm. In each of the figures, mark ◯ indicatesa sample of the storage element not provided with the spin barrier layer18 (Comparative Example), and mark ● indicates a sample of the storageelement provided with the spin barrier layer 18 (Example).

As seen from FIGS. 9A to 9D, the TMR ratio tends to decrease with anincrease in the amount of the non-magnetic element added. Particularly,in the cases where the film thickness of the non-magnetic layer 21 is1.0 nm, the TMR ratio is at or below 10%, indicating the substantialdisappearance of the TMR ratio; this means that the record readingoperation of reading the magnetization state by utilizing the differencein resistance is difficult to carry out and, therefore, the storageelement may not be adopted as a satisfactory storage element.

From this it is seen that an upper limit is present as to the amount ofthe non-magnetic element added, and a desirable upper limit to theaddition amount of the non-magnetic element is 20 atom %.

Besides, comparing at the same film thickness (addition amount), forevery one of the non-magnetic elements, the TMR ratio of the sampleprovided with the spin barrier layer 18 (Example) is higher than the TMRratio of the sample not provided with the spin barrier layer 18(Comparative Example).

[Measurement of Reversing Current]

For the purpose of evaluating the write characteristics of the storageelements, measurement of reversing current was conducted.

Specifically, a current with a pulse width of 10μ to 100 ms was passedin the storage element, and the resistance of the storage elementthereafter was measured. In measuring the resistance of the storageelement, the temperature was set at a room temperature of 25° C., and abias voltage impressed on the terminal of the word line and the terminalof the bit line was controlled to be 10 mV. Further, the current passedin the storage element was varied, to determine the current at which themagnetization of the storage layer was reversed. The value obtained byextrapolation of the pulse width dependence of this current to a pulsewidth of 1 ns was obtained as the reversing current.

For taking into account the dispersion (scattering) of the measurementsamong the storage elements, about 20 storage elements having the sameconfiguration were prepared, they were subjected to the measurement ofthe reversing current, and an average of the measurements was obtained.Further, the average reversing current was divided by the sectionalarea, in the film plane direction, of the storage element, to obtain thereversing current density.

The measurement results of the reversing current density are shown inFIGS. 10A to 10D. FIGS. 10A to 10D each show the relationship betweenthe thickness (film thickness) of the non-magnetic layer 21 and the TMRratio, in the cases where the non-magnetic layer 21 was Ti layer (FIG.10A), Ta layer (FIG. 10B), Nb layer (FIG. 10C), and Cr layer (FIG. 10D),respectively. In each of the figures, the TMR ratio of the sample of thestorage element 3 shown in FIG. 2 and the TMR ratio of the sample of thestorage element shown in FIG. 7B are presented as the cases where thethickness of the non-magnetic layer 21 was 0 nm. In each of the figures,mark ◯ indicates a sample of the storage element not provided with thespin barrier layer 18 (Comparative Example), and mark ● indicates asample of the storage element provided with the spin barrier layer 18(Example).

As seen from FIGS. 10A to 10D, both in the cases of the samples withoutthe spin barrier layer 18 (Comparative Examples) and in the cases of thesamples with the spin barrier layer 18 (Examples), it is possible, byconfiguring the storage layer 33 by inserting a non-magnetic layer 21having a certain thickness, to reduce the reversing current density, ascompared with the cases where the non-magnetic layer 21 is not inserted.

This is presumed to indicate that the insertion of the non-magneticlayer 21 reduced the saturation magnetization Ms of the storage layer33, resulting in the decrease in the reversing current density.

In addition, in the configuration where the non-magnetic layer 21 wasinserted, the reversing current density was smaller in the case of thesample with the spin barrier layer 18 (Example) than in the case of thesample without the spin barrier layer 18 (Comparative Example), forevery one of the film thickness values. In other words, the effect ofprovision of the spin barrier layer 18 is being demonstrated.

Incidentally, for the samples in which the film thickness of thenon-magnetic layer 21 was 1.0 nm, magnetization reversal was notconfirmed. This is considered to indicate that the reversing currentdensity increases as the film thickness of the non-magnetic layer 21 isincreased, but, when the film thickness reaches or exceeds a certainvalue, the reversing current density converges to infinity, i.e., thereversal would not occur.

On the other hand, of the cases of the samples with the spin barrierlayer 18 in Experiments, in the cases where the non-magnetic layer 21was not inserted (the storage element 3 shown in FIG. 2), the reversingcurrent density was high.

This is considered to indicate that the passage of the spin polarizedelectrons is somewhat restricted due to the presence of the spin barrierlayer 18, while it is made difficult for the reversal of the directionof magnetization M1 to occur, due to the large value of saturationmagnetization Ms at the film thickness of the storage layer 17 of 2 nm,and, because of the balance between these points, the reversing currentdensity is made to be very high.

Incidentally, even where the non-magnetic layer 21 is not inserted, thepresence of the spin barrier layer 18 restrains the spin pumpingphenomenon, as above-mentioned, whereby the effect of enhancing the spininjection efficiency and enhancing the thermal stability can beobtained.

Therefore, in order to suppress the reversing current density to a lowlevel in the case where the spin barrier layer 18 is provided but thenon-magnetic layer 21 is not inserted, it may be necessary to select thefilm thickness of the spin barrier layer 18 or the film thickness of thestorage layer (ferromagnetic layer) 17 in such a manner that the passageof the spin polarized electrons would not be restrained and that thesaturation magnetization Ms of the storage layer 17 would not beincreased considerably. For example, it may be contemplated to set thefilm thickness of the spin barrier layer 18 or the film thickness of thestorage layer (ferromagnetic layer) 17 at a value smaller than that inthis Example.

The above results have made it clear that the reversing current densitycan be reduced by configuring the storage layer 33 by providing the spinbarrier layer 18 for the storage layer 33 and inserting the non-magneticlayer 21 between the ferromagnetic layers 17 and 22, as shown in FIG. 4.

For obtaining such an effect as above, it suffices for the amount of thenon-magnetic element added to the spin barrier layer 18 to be not lessthan 1 atom %.

Incidentally, the inclination of the current pulse width dependence ofthe reversing current corresponds to the above-mentioned thermalstability index Δ of the storage element.

As the reversing current varies less with the pulse width (theinclination is smaller), the value of the thermal stability index Δ ishigher, meaning that the storage element is more resistant to thermaldisturbance.

Experiment 2

A 300 nm-thick thermal oxide film was formed on a 0.725 mm-thick siliconsubstrate, and a storage element 3 configured as shown in FIG. 2 wasformed thereon. Besides, in forming the spin barrier layer 18 of thestorage element 3, the high-resistance layer 41 and the non-magneticmetallic layer 42 were laminated, as shown in FIG. 5.

Specifically, in the storage element 3 configured as shown in FIG. 2,the material and film thickness of each layer were selected as follows.The under layer 11 was composed of a 3 nm-thick Ta film, theantiferromagnetic layer 12 was composed of a 20 nm-thick PtMn film, theferromagnetic layer 13 for constituting the pinned magnetization layer31 was composed of a 2 nm-thick CoFe film, the ferromagnetic layer 15was composed of a 2.5 nm-thick CoFeB film, the non-magnetic layer 14 forconstituting the pinned magnetization layer 31 of the laminate ferristructure was composed of a 0.8 nm-thick Ru film, the tunnel insulationlayer 16 was composed of a 0.9 nm-thick magnesium oxide film, thestorage layer 17 was composed of a 2 nm-thick CoFeB film, a film to bethe spin barrier layer 18 was composed of a laminate layer including amagnesium oxide film serving as the high-resistance layer 41 and a 5nm-thick Ti film serving as the non-magnetic metallic layer 42, and thecap layer 19 was composed of a 5 nm-thick Ta film. In addition, a 100nm-thick Cu film not shown (to be a word line which will be describedlater) was provided between the under layer 11 and the antiferromagneticlayer 12.

In the just-mentioned film configuration, the composition of the PtMnfilm was Pt₅₀Mn₅₀ (atom %), the composition of the CoFe film wasCo₉₀Fe₁₀ (atom %), and the ratio of Co:Fe:B in the CoFeB film was50:30:20.

The other layers than the tunnel insulation layer 16 and thehigh-resistance layer 41, both composed of a magnesium oxide film, wereformed by a DC magnetron sputtering method.

The tunnel insulation layer 16 and the high-resistance layer 41, bothcomposed of a magnesium oxide (MgO) film, were formed by an RF magnetronsputtering method.

Furthermore, after the layers of the storage element 3 were formed, theproduct was heat treated in a heat treatment furnace in a magnetic fieldunder the conditions of 10 kOe, 360° C., and for two hours, thereby toperform a normalizing heat treatment of the PtMn film provided as theantiferromagnetic layer 12, and the non-magnetic element was diffusedfrom the non-magnetic metallic layer 42 into the high-resistance layer41, to form the spin barrier layer 18.

Next, the word line portion was masked by photolithography, andthereafter the laminate film in other portions than the word lineportion was subjected to selective etching using an Ar plasma, to form aword line (lower electrode). In this case, the other portions than theword line portion were etched down to a depth of 5 nm of the substrate.

Thereafter, a mask in the pattern of the storage element 3 was formed byan electron beam drawing apparatus, and the laminate film was subjectedto selective etching, to form the storage element 3. The other portionsthan the storage element 3 portion were etched down to a levelimmediately above the Cu layer of the word line.

Incidentally, in a storage element to be served to evaluation ofcharacteristics, the resistance of the tunnel insulation layer has to besuppressed, since it is necessary to pass a sufficient current in thestorage element so as to generate a spin torque necessary formagnetization reversal. In view of this, the pattern of the storageelement 3 was set to be an elliptic shape with a minor axis of 0.09 μmand a major axis of 0.18 μm so that the storage element 3 would have anareal resistance of 20 Ωμm².

Next, the other portions than the storage element 3 portion wereinsulated by sputtering Al₂O₃ in a thickness of about 100 nm thereon.

Thereafter, a bit line to be an upper electrode and measurement padswere formed by use of photolithography.

In this manner, a sample of storage element 3 was produced.

By the just-mentioned manufacturing method, samples of storage element 3differing in the thickness of the magnesium oxide film of thehigh-resistance layer 41 to be the spin barrier layer 18 were prepared.Specifically, the samples of storage element 3 were prepared whilesetting the thickness of the magnesium oxide film after sputtering to be0.5 nm, 0.7 nm, 0.9 nm, 1.1 nm, and 1.3 nm, respectively.

Incidentally, the thermal stability index Δ is determined by thesaturation magnetization Ms and the film thickness of the storage layer17 and the area of the storage element 3; in the conditions of thisexperiment, a value of about 70 is being secured.

Experiment 3

Samples of storage element 3 were prepared in the same manner as thesamples of storage element 3 in Experiment 2, except that thenon-magnetic metallic layer 42 to be the spin barrier layer 18 in thestorage element 3 configured as shown in FIG. 2 was composed of a 5nm-thick Ta film.

Then, samples differing in the thickness of the magnesium oxide film ofthe high-resistance layer 41 to be the spin barrier layer 18 wereprepared. Specifically, samples of storage element 3 were prepared whilesetting the thickness of the magnesium oxide film after sputtering to be0.5 nm, 0.7 nm, 0.9 nm, 1.1 nm, and 1.3 nm, respectively.

Experiment 4

Samples of storage element 3 were prepared in the same manner as thesamples of storage element 3 in Experiment 3, except that thenon-magnetic metallic layer 42 to be the spin barrier layer 18 in thestorage element 3 configured as shown in FIG. 2 was composed of a 3nm-thick Au film.

Then, samples differing in the thickness of the magnesium oxide film ofthe high-resistance layer 41 to be the spin barrier layer 18 wereprepared. Specifically, samples of storage element 3 were prepared whilesetting the thickness of the magnesium oxide film after sputtering to be0.5 nm, 0.7 nm, 0.9 nm, 1.1 nm, and 1.3 nm, respectively.

Experiment 5

In the storage element 30 having the configuration shown in FIG. 3,i.e., the so-called Dual structure in which pinned magnetization layer31 and 32 are provided respectively on the lower and upper sides of astorage layer 17, the material and film thickness of each layer wasselected as follows. The under layer 11 was composed of a 3 nm-thick Tafilm, the antiferromagnetic layers 12 for constituting the lower pinnedmagnetization layer 31 and the upper pinned magnetization layer 32 wereeach composed of a 20 nm-thick PtMn film, the ferromagnetic layer 13 forconstituting the pinned magnetization layer 31 was composed of a 2nm-thick CoFe film, the ferromagnetic layer 15 was composed of a 2.5nm-thick CoFeB film, the non-magnetic layer 14 for constituting thepinned magnetization layer 31 of the laminate ferri structure wascomposed of a 0.8 nm-thick Ru film, the tunnel insulation layer 16 wascomposed of a 0.9 nm-thick magnesium oxide film, the storage layer 17was composed of a 2 nm-thick CoFeB film, a film to be the spin barrierlayer 18 was composed of a laminate layer including a magnesium oxidefilm serving as the high-resistance layer 41 and a 5 nm-thick Ta filmserving as the non-magnetic metallic layer 42, the ferromagnetic layer20 of the pinned magnetization layer 32 was composed of a 2.5 nm-thickCoFe film, and the cap layer 19 was composed of a 5 nm-thick Ta film.

The other configurations and the manufacturing method were selected tobe the same as in the cases of the samples of storage element 3 inExperiment 2; in this manner, the samples of storage element 30 in thisexperiment were prepared.

Then, samples differing in the thickness of the magnesium oxide film ofthe high-resistance layer 41 to be the spin barrier layer 18 wereprepared. Specifically, samples of storage element 30 were preparedwhile setting the thickness of the magnesium oxide film after sputteringto be 0.5 nm, 0.7 nm, 0.9 nm, 1.1 nm, and 1.3 nm, respectively.

The samples of storage elements 3, 30 prepared in Experiments 2 to 5 asabove-described were served to evaluation of characteristics, asfollows.

[Measurement of TMR Ratio]

Measurement of TMR ratio was conducted for the samples of storageelement, by the same measuring method as in Experiment 1.

[Measurement of Reversing Current]

For the purpose of evaluating the write characteristics of the storageelements 3, 30, measurement of reversing current was carried out.

Incidentally, for taking into account the dispersion of the reversingcurrent among the storage elements 3, 30, 20 samples of each of thestorage elements 3, 30 with the same configuration were prepared, theywere served to measurement of the reversing current, and an average ofthe measurements was determined.

The measurement of the reversing current was conducted for the currentsof both polarities (upward and downward).

As for the relationship between the direction of magnetization M1 of thestorage layer 17 and the direction of magnetization M15 of theferromagnetic layer 15 in the pinned magnetization layer 31, a reversalfrom the parallel state to the anti-parallel state occurs when thecurrent is passed from the word line to the bit line, whereas a reversalfrom the anti-parallel state to the parallel state occurs when thecurrent is passed from the bit line to the word line.

The reversing current in the case of passing the current from the wordline to the bit line was defined as Ic⁺, whereas the reversing currentin the case of passing the current from the bit line to the word linewas defined as Ic⁻.

The results of measurement of TMR ratio for the samples of storageelements 3, 30 in Experiments 2 to 5 are shown in FIGS. 11A to 11D.FIGS. 11A to 11C show the cases where the non-magnetic metallic layer 42was Ti layer, Ta layer, and Au layer, respectively, and FIG. 11D showsthe case where the non-magnetic metallic layer 42 used for the spinbarrier layer 18 in the Dual structure (the storage element 30 of FIG.3) was Ta film.

Besides, the results of measurement of reversing current density for thesamples of storage elements 3, 30 in Experiments 2 to 5 are shown inFIGS. 12A to 12D. FIGS. 12A to 12C show the cases where the non-magneticmetallic layer 42 was Ti layer, Ta layer, and Au layer, respectively,and FIG. 12D shows the case where the non-magnetic metallic layer 42used for the spin barrier layer 18 in the Dual structure (the storageelement 30 of FIG. 3) was Ta film.

As seen from FIGS. 11A to 11D, the TMR ratio depends on the thickness ofthe MgO film of the high-resistance layer 41, before the heat treatment,for constituting the spin barrier layer 18. It is further seen that whenthe film thickness is large, the element resistance is raised by thespin barrier layer 18, with the result of a lowering in the TMR ratio.

The TMR ratio of 100% indicated by broken line in each of the figures isa value necessary for obtaining a reading speed and a margin inoperation as a memory, and is in such a range that the characteristicsof the memory can be maintained, even though the TMR ratio is sacrificedfor improving the reversing current density.

Therefore, in the samples in Experiments 2 to 5, it is desirable to setthe thickness of the MgO film of the high-resistance layer 41 to be notmore than about 1.2 nm.

As seen from FIGS. 12A to 12D, the reversing current density alsodepends on the thickness of the MgO film of the high-resistance layer41, before the heat treatment, for constituting the spin barrier layer18. It is also seen that when the film thickness is small, the effect ofthe provision of the spin barrier layer 18 is reduced, with the resultof a rise in the reversing current density.

The reversing current density of 2.5 mA/cm² indicated by broken line ineach of the figures is a value necessary for realizing a memoryutilizing the spin reversal, and a memory utilizing the spin reversalcan be configured by setting the reversing current density to be notmore than 2.5 mA/cm².

Therefore, in the samples in Experiments 2 to 5, it is desirable to setthe thickness of the MgO film of the high-resistance layer 41 to be notmore than about 0.7 nm.

When this is combined with the results shown in FIGS. 11A to 11D, thedesirable range of the thickness of the MgO film of the high-resistancelayer 41 to be the spin barrier layer 18 is from 0.7 to 1.2 nm.

From the experimental results as above, it is seen that, by providingthe spin barrier layer 18 composed of an insulating material (magnesiumoxide or the like) containing a non-magnetic element, it is possible tomaintain an MR ratio of not less than 100% which is necessary for thereading operation of a memory, and to drastically reduce the reversingcurrent density, which has been the greatest problem. Thus, for example,it is possible to produce the storage elements 3, 30 in whichinformation can be written at a small current density of not more than2.5 mA/cm².

Therefore, it is possible to realize a memory utilizing spin injection,of such a low power consumption type as not to be realizable accordingto the related art.

Experiment 6 Examples

A storage element 50 configured as shown in FIG. 6 was formed on asilicon substrate which had been provided with a thermal oxide film on asurface thereof.

Specifically, in the storage element 50 configured as shown in FIG. 6,the material and film thickness of each layer were selected as follows.The under layer 11 was composed of a 20 nm-thick Ta film, theantiferromagnetic layer 12 was composed of a 30 nm-thick PtMn film, theferromagnetic layer 13 for constituting the pinned magnetization layer31 of the laminate ferri structure was composed of a 2.2 nm-thick CoFefilm, the non-magnetic layer 14 was composed of a 0.8 nm-thick Ru film,the ferromagnetic layer 15 was composed of a 2 nm-thick CoFeB film, thetunnel insulation layer 16 was composed of a 0.9 nm-thick MgO film, thestorage layer 17 was composed of a 2.2 nm-thick CoFeB film, thenon-magnetic metallic layer 23 was composed of a 0.2 nm-thick Cu film,the spin barrier layer 18 was composed of a 0.8 nm-thick MgO film, andthe cap layer 19 was composed of a 10 nm-thick Ta film.

In the just-mentioned film configuration, the composition of the CoFeBfilm was Co₄₈Fe₃₂B₂₀ (atom %), the composition of the CoFe film wasCo₉₀Fe₁₀ (atom %), and the composition of the PtMn film was Pt₃₈Mn₆₂(atom %).

Each of these layers was formed by a magnetron sputtering method.

Further, after the layers of the storage element 50 were formed, theproduct was heat treated in a heat treatment furnace in a magnetic fieldunder the conditions of 10 kOe, 340° C., and for two hours, to therebyperform a normalizing heat treatment of the PtMn film of theantiferromagnetic layer 12.

Next, a sample of storage element 50 having an elliptic pattern with aminor axis of about 110 nm and a major axis of about 170 nm was producedby use of such techniques as photolithography, electron beam drawing,and etching.

Besides, as other Examples, samples of storage element 3 having thestorage layer 17 not provided with the non-magnetic metallic layer (Cufilm) 23 as shown in FIG. 2 were produced by the same manufacturingmethod as above.

[Measurement of Reversing Current]

For the purpose of evaluating the write characteristics of the storageelements, measurement of reversing current was conducted.

As an index of the reversing current, there is adopted Jc0, whichrepresents the reversing current density at the absolute temperature 0K. Now, Jc0 will be described. In general, when it is intended tomeasure the magnetization reversal by spin injection (spin transfer) ata finite temperature, the effect of magnetization reversal by thermaldisturbance would be superposed on the object of measurement, so thatthe effect of pure spin injection is difficult to discern. For example,a magnetic material extremely low in thermal stability is susceptible tomagnetization reversal, but this reversal may not easily be regarded asthe effect of spin injection (spin transfer), and such a magneticmaterial may not be used for a memory, from the viewpoint of retentionof stored information.

If evaluation at an extremely low temperature near absolute 0 K can becarried out, the just-mentioned thermal disturbance problem is solved.The reversing current density in this case has a value which is close toJc0 and does not contain the influence of thermal disturbance.

However, the evaluation at the extremely low temperature is attended bydifficulties in measurement. In view of this, Jc0 was estimated by usingan external magnetic field at the time of measurement.

Specifically, the measurement and estimation were carried out in thefollowing procedure.

A predetermined external magnetic field is applied to the storageelement, and a current in a direction perpendicular to the film plane ofthe laminate film is passed. When the magnitude of the current is variedunder this condition, reversal of the direction of magnetization of thestorage layer (magnetization reversal) occurs at a current of not lessthan a certain threshold (reversing current). This process is repeatedby varying the magnitude of the external magnetic field.

Then, a situation comes to be obtained in which magnetization reversalunder an external magnetic field of not less than a certain thresholdoccurs even with no current passed. This is the same magnetizationreversal as that in the case of an ordinary MRAM.

The application of the external magnetic field is for controlling theenergy barrier separating two stable energy states from each other,which determines the reversal due to thermal disturbance.

Then, by utilizing the dependence of the reversing current on theexternal magnetic field, the magnitude of Jc0 can be known (refer to,for example, Y. Higo et al., Appl. Phys. Lett 87 082502 (2005)).

First, for the samples in Examples (the storage element 50 of FIG. 6) inwhich the thickness of the non-magnetic metallic layer 23 was 0.2 nm,the measurement was conducted in the above-mentioned procedure, and thethreshold current relevant to the reversal of the direction ofmagnetization M1 of the storage layer 17 was determined, for each valueof the external magnetic field.

The measurement results are shown in FIG. 13, in which external magneticfield is taken on the axis of abscissas, current is taken on the axis ofordinates, and the threshold current relevant to the reversal of thedirection of magnetization M1 of the storage layer 17 is plotted.Incidentally, in FIG. 13, the current density computed from the passedcurrent and the area of the storage element 50 is given on the axis ofordinates on the right side.

It is seen from FIG. 13 that the threshold current varies with themagnitude of the external magnetic field. It is also seen that, when anexternal magnetic field having a certain magnitude is applied, themagnetization reversal takes place even if the current is substantiallyzero.

For each of the storage elements in Examples, about 20 storage elementswere prepared under the same conditions according to the above-mentionedprocedure, they were subjected to measurement of the threshold current(reversing current) in the above-mentioned procedure, and an average ofthe measurements was determined. Further, the reversing current densitywas obtained by dividing the average reversing current by the sectionalarea, in the film plane direction, of the storage element.

The measurement results of the reversing current density are shown inFIG. 14.

As seen from FIG. 14, of the samples in Examples, those with theconfiguration of the storage element 3 of FIG. 2, in which the storagelayer 17 and the spin barrier layer 18 were laminated directly on eachother, showed a reversing current density of 3.88 mA/cm².

Further, of the samples in Examples, those with the configuration of thestorage element 50 of FIG. 6, in which the non-magnetic metallic layer23 was provided between the storage layer 17 and the spin barrier layer18, showed a reversing current density of 2.59 mA/cm².

From the above results, it is seen that the reversing current densitycan be reduced by providing the non-magnetic metallic layer 23 betweenthe spin barrier layer 18 and the storage layer 17.

In the present invention, the film configurations of the storageelements 3, 30, 40, and 50 shown in the above-described embodiments arenot limitative, and various film configurations can be adopted.

While the pinned magnetization layer 31 in the storage element has anexchange bias laminate ferri structure in the above embodiments, asingle ferromagnetic layer may be used, and a laminate structure ofantiferromagnetic layer/ferromagnetic layer or a laminate ferristructure not having an antiferromagnetic layer may also be used,without any problem, insofar as a satisfactory pinning of magnetizationcan be achieved.

Each ferromagnetic layer in the pinned magnetization layer is notlimited to a single layer but may be a laminate film obtained bylaminating a plurality of layers differing in material.

Besides, the storage element may be configured by laminating the layersin an order reverse to the order in the above-described embodiments.

The present invention is not limited to the above-described embodiments,and other various configurations can be adopted within the scope of thegist of the invention.

What is claimed is:
 1. A storage element comprising, stacked in alaminate direction: a storage layer configured to hold information bymeans of a magnetization state of a magnetic material, a pinnedmagnetization layer on one side of said storage layer, a tunnelinsulation layer between said storage layer and said pinnedmagnetization layer, and a spin barrier layer in contact with anotherside of said storage layer that faces away from said pinnedmagnetization layer and said tunnel insulation layer, said spin barrierlayer comprising magnesium oxide and a non-magnetic metallic elementdiffused in the magnesium oxide, the non-magnetic metallic element beingat least one selected from the group consisting of Ti, Ta, Zr, Hf, Nb,Cr, Mo, W, and V.
 2. The storage element as set forth in claim 1,wherein said non-magnetic metallic element is distributed in a part ofsaid spin barrier layer or throughout said spin barrier layer.
 3. Thestorage element as set forth in claim 1, wherein said spin barrier layerhas an areal resistance of not more than 10 Ωμm².
 4. The storage elementas set forth in claim 1, wherein said non-magnetic metallic elementcontained in said spin barrier layer is at least one selected from thegroup including of Zr and Hf.
 5. The storage element as set forth inclaim 1, wherein said non-magnetic metallic element contained in saidspin barrier layer is Ti.
 6. The storage element as set forth in claim1, wherein said non-magnetic metallic element contained in said spinbarrier layer is Ta.
 7. The storage element as set forth in claim 1,wherein said non-magnetic metallic element contained in said spinbarrier layer is Zr.
 8. The storage element as set forth in claim 1,wherein said non-magnetic metallic element contained in said spinbarrier layer is Hf.
 9. The storage element as set forth in claim 1,wherein said non-magnetic metallic element contained in said spinbarrier layer is Nb.
 10. The storage element as set forth in claim 1,wherein said non-magnetic metallic element contained in said spinbarrier layer is Cr.
 11. The storage element as set forth in claim 1,wherein said non-magnetic metallic element contained in said spinbarrier layer is Mo.
 12. The storage element as set forth in claim 1,wherein said non-magnetic metallic element contained in said spinbarrier layer is W.
 13. The storage element as set forth in claim 1,wherein said non-magnetic metallic element contained in said spinbarrier layer is V.
 14. The storage element as set forth in claim 1,wherein said storage layer includes a lamination with a plurality offerromagnetic layers and a non-magnetic layer interposed between theferromagnetic layers.
 15. The storage element as set forth in claim 14,wherein said ferromagnetic layers of said storage layer contain CoFeB asa main constituent, said non-magnetic layer of said storage layerincludes at least one non-magnetic element selected from the groupincluding Ti, Ta, Nb, and Cr, and the content of said non-magneticelement in said storage layer is in the range of 1 to 20 atom %.
 16. Thestorage element as set forth in claim 1, wherein said tunnel insulationlayer includes magnesium oxide.
 17. The storage element as set forth inclaim 1, wherein said storage layer has a layer containing CoFeB as amain constituent.
 18. A memory comprising: storage elements eachcomprising, stacked in a laminate direction, (a) a storage layerconfigured to hold information by means of a magnetization state of amagnetic material, (b) a pinned magnetization layer on one side of saidstorage layer, (c) a tunnel insulation layer between said storage layerand said pinned magnetization layer, and (d) a spin barrier layer incontact with another side of said storage layer that faces away fromsaid pinned magnetization layer and said tunnel insulation layer, saidspin barrier layer comprising magnesium oxide and a non-magneticmetallic element diffused in the magnesium oxide, the non-magneticmetallic element being at least one selected from the group consistingof Ti, Ta, Zr, Hf, Nb, Cr, Mo, W, and V; and two wirings that run alongintersecting directions.